MRFE6VP61K25HSR6【PDF 12/23 页】MOSFET RF N-CH 1.25KW NI-1230S

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2

RF Device Data

Freescale Semiconductor, Inc.

MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +133

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

?C

Case Operating Temperature

TC

150

?C

Operating Junction Temperature

(1,2)

TJ

225

?C

Total Device Dissipation @ TC

=25?C

Derate above 25?C

PD

1333

6.67

W

W/?C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

CW: Case Temperature 63?C, 1250 W CW, IDQ

= 100 mA, 230 MHz

R?JC

0.15

?C/W

Thermal Impedance, Junction to Case

Pulse: Case Temperature 66?C, 1250 W Pulse, 100

?sec Pulse Width, 20% Duty Cycle,

IDQ

= 100 mA, 230 MHz

Z?JC

0.03

?C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 3500 V

Machine Model (per EIA/JESD22--A115)

B, passes 250 V

Charge Device Model (per JESD22--C101)

IV, passes 4000 V

Table 4. Electrical Characteristics

(TA

=25?C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

(4)

Gate--Source Leakage Current

(VGS

=5Vdc,VDS

=0Vdc)

IGSS

—

—

1

?Adc

Drain--Source Breakdown Voltage

(VGS

=0Vdc,ID

= 100 mA)

V(BR)DSS

133

—

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS

=50Vdc,VGS

=0Vdc)

IDSS

—

—

10

?Adc

Zero Gate Voltage Drain Leakage Current

(VDS

= 100 Vdc, VGS

=0Vdc)

IDSS

—

—

20

?Adc

On Characteristics

Gate Threshold Voltage

(4)

(VDS

=10Vdc,ID

= 1776

?Adc)

VGS(th)

1.7

2.2

2.7

Vdc

Gate Quiescent Voltage

(VDD

=50Vdc,ID

= 100 mAdc, Measured in Functional Test)

VGS(Q)

1.9

2.2

2.9

Vdc

Drain--Source On--Voltage

(4)

(VGS

=10Vdc,ID

=2Adc)

VDS(on)

—

0.15

—

Vdc

Forward Transconductance

(VDS

=10Vdc,ID

=30Adc)

gfs

—

28.0

—

S

Dynamic Characteristics

(4)

Reverse Transfer Capacitance

(VDS

=50Vdc?

30 mV(rms)ac @ 1 MHz, VGS

=0Vdc)

Crss

—

2.8

—

pF

Output Capacitance

(VDS

=50Vdc?

30 mV(rms)ac @ 1 MHz, VGS

=0Vdc)

Coss

—

185

—

pF

Input Capacitance

(VDS

=50Vdc,VGS

=0Vdc?

30 mV(rms)ac @ 1 MHz)

Ciss

—

562

—

pF

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Each side of device measured separately.

(continued)

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